Dynamics of {sup 3}He impurities in {sup 4}He films

Journal Article · Tue Aug 01 04:00:00 EDT 1995 · Journal of Low Temperature Physics

DOI:https://doi.org/10.1007/BF00751504· OSTI ID:207117

Clements, B E ^[1]; Krotscheck, E ^[1]; Saarela, M ^[2]

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1. Texas A&M Univ., College Station, TX (United States)
2. Univ. of Oulu (Finland)

Using a microscopic variational theory the authors calculate the binding energy of {sup 3}He impurities in films of {sup 4}He absorbed to a graphite substrate. Without adjustable parameters, they obtain excellent agreement with the experimental binding energies for the ground state of the {sup 3}He impurity. To calculate excited states, they then introduce a time-dependent variational wave function. In that way, the impurity acquires a hydrodynamic effective mass for its motion parallel to the surface due to hydrodynamic backflow. Excited states have a finite lifetime. When these effects are included, both the energy of the first excited state of the impurity, and the effective mass of the ground state, also agree well with experimental data.

• Sponsoring Organization: USDOE
• OSTI ID: 207117
• Journal Information: Journal of Low Temperature Physics, Journal Name: Journal of Low Temperature Physics Journal Issue: 3-4 Vol. 100; ISSN 0022-2291; ISSN JLTPAC
• Country of Publication: United States
• Language: English

Related Subjects

66 PHYSICS
BINDING ENERGY
DYNAMICS
HELIUM 3
HELIUM 4
IMPURITIES
QUANTUM FLUIDS
THIN FILMS
VARIATIONAL METHODS