High-electron-mobility AlGaN/GaN heterostructures grown on Si(001) by molecular-beam epitaxy
- STMicroelectronics, 850 rue Jean Monnet, F-38926 Crolles (France)
The growth of AlGaN/GaN heterostructure on Si (001) substrates by molecular-beam epitaxy using ammonia as nitrogen precursor is reported. The structural, optical, and electrical properties of such heterostructures are assessed. It is shown that a two-dimensional electron gas is formed at the Al{sub 0.23}Ga{sub 0.77}N/GaN interface. This type of heterostructure exhibits a sheet carrier density of 4.2x10{sup 12} cm{sup -2} with a mobility of 730 cm{sup 2}/V s at room temperature. Preliminary results concerning high-electron-mobility-transistor static characteristics are presented.
- OSTI ID:
- 20709814
- Journal Information:
- Applied Physics Letters, Vol. 87, Issue 13; Other Information: DOI: 10.1063/1.2067698; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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