In situ infrared spectroscopy of hafnium oxide growth on hydrogen-terminated silicon surfaces by atomic layer deposition
- Department of Physics and Astronomy, Laboratory for Surface Modification, Rutgers University, Piscataway, New Jersey 08854 (United States)
The interface formation between HfO{sub 2} and H-terminated Si(111) and Si(100) is studied by in situ infrared absorption spectroscopy during atomic layer deposition using alternating tetrakis-ethylmethylamino hafnium (TEMAH) and deuterium oxide (D{sub 2}O) pulses. The HfO{sub 2} growth is initiated by the reaction of TEMAH with Si-H rather than D{sub 2}O, and there is no evidence for SiO{sub 2} formation at moderate growth temperatures ({approx}100 deg. C). Although Rutherford backscattering shows a linear increase of Hf coverage, direct observations of Si-H, Si-O-Hf, and HfO{sub 2} phonons indicate that five cycles are needed to reach the steady state interface composition of {approx}50% reacted sites. The formation of interfacial SiO{sub 2} ({approx}0.7 nm) is observed after postdeposition annealing at 700 deg. C in ultrapure nitrogen.
- OSTI ID:
- 20709809
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 13 Vol. 87; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
ABSORPTION SPECTROSCOPY
ANNEALING
CRYSTAL GROWTH
DEPOSITION
HAFNIUM OXIDES
HEAVY WATER
HYDROGEN
INFRARED SPECTRA
INTERFACES
LAYERS
NITROGEN
PHONONS
PULSES
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SILICON
SILICON OXIDES
STEADY-STATE CONDITIONS
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0400-1000 K