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Title: Formation of nanopores in a SiN/SiO{sub 2} membrane with an electron beam

Abstract

An electron beam can drill nanopores in SiO{sub 2} or silicon nitride membranes and shrink a pore to a smaller diameter. Such nanopores are promising for single molecule detection. The pore formation in a 40 nm thick silicon nitride/SiO{sub 2} bilayer using an electron beam with a diameter of 8 nm (full width of half height) was investigated by electron energy loss spectroscopy with silicon nitride facing toward and away from the source. The O loss shows almost linear--independent of which layer faces the source, while N loss is quite complicated. After the formation of a pore, the membrane presents a wedge shape over a 70 nm radius around the nanopore.

Authors:
; ; ; ;  [1]
  1. Kavli Institute of NanoScience, Delft University of Technology, 2628 CJ Delft (Netherlands)
Publication Date:
OSTI Identifier:
20709756
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 87; Journal Issue: 11; Other Information: DOI: 10.1063/1.2043247; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ELECTRON BEAMS; ELECTRON SPECTROSCOPY; ELECTRONS; ENERGY LOSSES; ENERGY SPECTRA; MEMBRANES; NANOSTRUCTURES; POROUS MATERIALS; SEMICONDUCTOR MATERIALS; SILICON NITRIDES; SILICON OXIDES

Citation Formats

Mengyue, Wu, Krapf, Diego, Zandbergen, Mathijs, Zandbergen, Henny, Batson, Philip E, and IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598. Formation of nanopores in a SiN/SiO{sub 2} membrane with an electron beam. United States: N. p., 2005. Web. doi:10.1063/1.2043247.
Mengyue, Wu, Krapf, Diego, Zandbergen, Mathijs, Zandbergen, Henny, Batson, Philip E, & IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598. Formation of nanopores in a SiN/SiO{sub 2} membrane with an electron beam. United States. doi:10.1063/1.2043247.
Mengyue, Wu, Krapf, Diego, Zandbergen, Mathijs, Zandbergen, Henny, Batson, Philip E, and IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598. Mon . "Formation of nanopores in a SiN/SiO{sub 2} membrane with an electron beam". United States. doi:10.1063/1.2043247.
@article{osti_20709756,
title = {Formation of nanopores in a SiN/SiO{sub 2} membrane with an electron beam},
author = {Mengyue, Wu and Krapf, Diego and Zandbergen, Mathijs and Zandbergen, Henny and Batson, Philip E and IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598},
abstractNote = {An electron beam can drill nanopores in SiO{sub 2} or silicon nitride membranes and shrink a pore to a smaller diameter. Such nanopores are promising for single molecule detection. The pore formation in a 40 nm thick silicon nitride/SiO{sub 2} bilayer using an electron beam with a diameter of 8 nm (full width of half height) was investigated by electron energy loss spectroscopy with silicon nitride facing toward and away from the source. The O loss shows almost linear--independent of which layer faces the source, while N loss is quite complicated. After the formation of a pore, the membrane presents a wedge shape over a 70 nm radius around the nanopore.},
doi = {10.1063/1.2043247},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 11,
volume = 87,
place = {United States},
year = {2005},
month = {9}
}