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Title: Structural and magnetic properties of epitaxial L2{sub 1}-structured Co{sub 2}(Cr,Fe)Al films grown on GaAs(001) substrates

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.1888050· OSTI ID:20709654
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  1. Core Research for Evolutional Science and Technology (CREST), Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012 (Japan)

We have successfully grown both L2{sub 1} polycrystalline Co{sub 2}CrAl and epitaxial L2{sub 1}-structured Co{sub 2}FeAl films onto GaAs(001) substrates under an optimized condition. Both structural and magnetic analyses reveal the detailed growth mechanism of the alloys, and suggest that the Co{sub 2}CrAl film contains atomically disordered phases, which decreases the magnetic moment per f.u., while the Co{sub 2}FeAl film satisfies the generalized Slater-Pauling behavior. By using these films, magnetic tunnel junctions (MTJs) have been fabricated, showing 2% tunnel magnetoresistance (TMR) for the Co{sub 2}CrAl MTJ at 5 K and 9% for the Co{sub 2}FeAl MTJ at room temperature (RT). Even though the TMR ratio still needs to be improved for future device applications, these results explicitly include that the Co{sub 2}(Cr,Fe)Al full Heusler alloy is a promising compound to achieve half-metallicity at RT by controlling both disorder and surface structures in the atomic level by manipulating the Fe concentration.

OSTI ID:
20709654
Journal Information:
Journal of Applied Physics, Vol. 97, Issue 10; Other Information: DOI: 10.1063/1.1888050; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
Country of Publication:
United States
Language:
English