Approach for fabricating microgated field-emission arrays with individual carbon nanotube emitters
- National Laboratory for Vacuum Electronics, Beijing Vacuum Electronics Research Institute, P. O. Box 749, Beijing 100016 (China)
We propose an approach for fabricating microgated field-emission arrays (FEAs) with individual carbon nanotube (CNT) emitters. Beginning with the fabrication of microgated cell arrays, the process involves depositing a sacrificial layer at a glancing angle to close in the aperture that a small area catalyst can be placed on the bottom of the cells (for type A) or on the predeposited Mo tips (for type B); then, vertically aligned CNTs are grown by a dc plasma-enhanced chemical vapor deposition following a lift-off process. Scanning electron microscopy (SEM) images of both types of CNT FEAs show a large percentage of emitters with single, double or triple CNTs. For a 5x5 type B CNT FEA, at a gate voltage of 100 V, an average anode current reaches 1.4 {mu}A per cell while the gate current is less than 5% of the anode current.
- OSTI ID:
- 20706472
- Journal Information:
- Applied Physics Letters, Vol. 87, Issue 23; Other Information: DOI: 10.1063/1.2140474; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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