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Approach for fabricating microgated field-emission arrays with individual carbon nanotube emitters

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.2140474· OSTI ID:20706472
; ; ; ; ; ;  [1]
  1. National Laboratory for Vacuum Electronics, Beijing Vacuum Electronics Research Institute, P. O. Box 749, Beijing 100016 (China)

We propose an approach for fabricating microgated field-emission arrays (FEAs) with individual carbon nanotube (CNT) emitters. Beginning with the fabrication of microgated cell arrays, the process involves depositing a sacrificial layer at a glancing angle to close in the aperture that a small area catalyst can be placed on the bottom of the cells (for type A) or on the predeposited Mo tips (for type B); then, vertically aligned CNTs are grown by a dc plasma-enhanced chemical vapor deposition following a lift-off process. Scanning electron microscopy (SEM) images of both types of CNT FEAs show a large percentage of emitters with single, double or triple CNTs. For a 5x5 type B CNT FEA, at a gate voltage of 100 V, an average anode current reaches 1.4 {mu}A per cell while the gate current is less than 5% of the anode current.

OSTI ID:
20706472
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 23 Vol. 87; ISSN APPLAB; ISSN 0003-6951
Country of Publication:
United States
Language:
English

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