Low-temperature crystallized pyrochlore bismuth zinc niobate thin films by excimer laser annealing
- Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)
The crystallization temperature of Bi{sub 1.5}Zn{sub 0.5}Nb{sub 1.5}O{sub 6.5} (BZN) films was reduced by a combination of conventional heating and irradiation with a pulsed KrF excimer laser. Both the energy density and substrate temperature affect the properties of laser-annealed BZN films. It was found that the crystallinity and dielectric properties improved after a postannealing at 400 deg. C for 2 h in an oxygen atmosphere. BZN films crystallized with an energy density of 27 mJ/cm{sup 2} at a substrate temperature of 400 deg. C with postannealing showed dielectric properties comparable to those of rapid thermal annealed BZN films. Laser crystallization at substrate temperatures {<=}400 deg. C makes integration with polymeric substrates possible.
- OSTI ID:
- 20706468
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 23 Vol. 87; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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