H-sensitive radiative recombination path in Si nanoclusters embedded in SiO{sub 2}

Journal Article · Mon Nov 21 04:00:00 EST 2005 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2135382· OSTI ID:20706437

Comedi, D; Zalloum, O H.Y.; Mascher, P ^[1]

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1. Centre for Electrophotonic Materials and Devices, Department of Engineering Physics, McMaster University, Hamilton, Ontario, L8S 4L7 (Canada)

The room-temperature photoluminescence (PL) from silicon nanocrystals embedded in a SiO{sub 2} matrix fabricated by electron cyclotron resonance plasma-enhanced chemical vapor deposition and subsequent annealing in Ar and (Ar+5%H{sub 2}) was studied. In addition to strong increases of the integrated PL intensity (factors of {approx}4 to 10), the selective enhancement of contributions to the PL spectra at long wavelengths was observed for (Ar+5%H{sub 2}) annealings. The selective H passivation of Si dangling bonds in disordered Si nanoclusters where radiative recombination proceeds through disorder-induced shallow states is proposed as a possible explanation for the observed effects.

• OSTI ID: 20706437
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 21 Vol. 87; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
ARGON
CHEMICAL VAPOR DEPOSITION
ELECTRON CYCLOTRON-RESONANCE
HYDROGEN
IMPURITIES
NANOSTRUCTURES
PASSIVATION
PHOTOLUMINESCENCE
PLASMA
RECOMBINATION
SEMICONDUCTOR MATERIALS
SILICON
SILICON OXIDES
TEMPERATURE RANGE 0273-0400 K
WAVELENGTHS