Deep-level emissions influenced by O and Zn implantations in ZnO
- Physical Electronics and Photonics, Department of Physics, Goeteborg University, SE-412 96 Goeteborg (Sweden)
A set of bulk ZnO samples implanted with O and Zn at various densities were investigated by photoluminescence. The implantation concentration of O and Zn is varied between 1x10{sup 17}/cm{sup 3} and 5x10{sup 19}/cm{sup 3}. The samples were thermally treated in an oxygen gas environment after the implantation. The results clearly show the influence of O and Zn implantations on the deep-level emission. By comparing the photoluminescence spectra for the samples with different implantations, we can conclude that the V{sub Zn} is responsible to the observed deep-level emission. In addition, a novel transition at the emission energy of 3.08 eV at 77 K appears in the O-implanted sample with 5x10{sup 19}/cm{sup 3} implantation concentration. The novel emission is tentatively identified as O-antisite O{sub Zn}.
- OSTI ID:
- 20706430
- Journal Information:
- Applied Physics Letters, Vol. 87, Issue 21; Other Information: DOI: 10.1063/1.2135880; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Single phase formation of Co-implanted ZnO thin films by swift heavy ion irradiation: Optical studies
Crystallographically oriented Zn nanocrystals formed in ZnO by Mn{sup +}-implantation