The antimony-vacancy defect in p-type germanium

Journal Article · Mon Oct 24 00:00:00 EDT 2005 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2112168· OSTI ID:20706392

Lindberg, C E; Hansen, J Lundsgaard; Bomholt, P; Mesli, A; Nielsen, K Bonde; Larsen, A Nylandsted; Dobaczewski, L ^[1]

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1. Institute of Physics and Astronomy, University of Aarhus, 8000 Aarhus C (Denmark)

Ge-n{sup +}p mesa diodes have been produced in 2-{omega} cm single crystals using a molecular-beam epitaxy (MBE) process to grow the Sb-doped epitaxial Ge n{sup +}-top layer. The diodes are characterized by a leakage current at room temperature of 8x10{sup -4} A/cm{sup 2} at a reverse bias of 3 V. The diodes have been used to study irradiation-induced defects in p-type Ge, in particular Sb-related defects, where Sb stems from in-diffusion during the MBE growth. Two lines in the deep level transient spectroscopy (DLTS) spectra are related to the presence of Sb. One of these lines originates from the single-acceptor state of the SbV pair with an enthalpy of ionization of {delta}H{sub p}=(0.309{+-}0.007) eV, the other from a state with an enthalpy of ionization of {delta}H{sub p}=(0.095{+-}0.006) eV, which is concluded to be the single donor-charge state of the SbV pair.

• OSTI ID: 20706392
• Journal Information: Applied Physics Letters, Vol. 87, Issue 17; Other Information: DOI: 10.1063/1.2112168; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANTIMONY
CHARGE STATES
CRYSTAL GROWTH
DEEP LEVEL TRANSIENT SPECTROSCOPY
DIFFUSION
DOPED MATERIALS
ENTHALPY
GERMANIUM
IMPURITIES
IONIZATION
IRRADIATION
LAYERS
LEAKAGE CURRENT
MOLECULAR BEAM EPITAXY
MONOCRYSTALS
SEMICONDUCTOR DIODES
SEMICONDUCTOR MATERIALS
TEMPERATURE RANGE 0273-0400 K
VACANCIES