Real-time x-ray studies of Mo-seeded Si nanodot formation during ion bombardment
- Department of Aerospace and Mechanical Engineering, Boston University, Boston, Massachusetts 02215 (United States)
The formation of self-organized Si nanostructures induced by Mo seeding during normal incidence Ar{sup +} ion bombardment at room temperature is reported. Silicon surfaces without Mo seeding develop only power-law roughness during 1000 eV ion bombardment at normal incidence, in agreement with scaling theory expectations of surface roughening. However, supplying Mo atoms to the surface during ion bombardment seeds the development of highly correlated, nanoscale structures ('dots') that are typically 3 nm high with a spatial wavelength of approximately 30 nm. With time, these saturate and further surface roughening is dominated by the growth of long-wavelength corrugations.
- OSTI ID:
- 20706385
- Journal Information:
- Applied Physics Letters, Vol. 87, Issue 16; Other Information: DOI: 10.1063/1.2099521; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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