Effect of damage by 2 MeV He ions and annealing on H{sub c2} in MgB{sub 2} thin films
- Department of Chemical and Materials Engineering, Arizona State University, Tempe, Arizona 85287-6006 (United States)
The effect of damage induced by 2 MeV alpha particles, followed by annealing, on the critical temperature (T{sub c}), resistivity ({rho}), and upper critical field (H{sub c2}), of three MgB{sub 2} films made by different deposition processes has been studied. Damage creates a linear decrease in T{sub c} with residual resistivity ({rho}{sub 0}), and produces maxima in both H{sub c2}{sup perpendicular}(0) and H{sub c2}{sup parallel}(0). Below T{sub c}s of about 25 K, H{sub c2}(0) depends roughly linearly on T{sub c}, while the anisotropy of H{sub c2}(0) decreases as T{sub c} decreases. Annealing the films reproduces the T{sub c} versus {rho}{sub 0} dependence but not the H{sub c2}(0) values induced by damage.
- OSTI ID:
- 20702597
- Journal Information:
- Applied Physics Letters, Vol. 87, Issue 7; Other Information: DOI: 10.1063/1.2012524; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Effect of damage by 2 MeV He ions on the normal and superconducting properties of magnesium diboride
Magnetoresistivity and H{sub c2}(T) in MgB{sub 2}