Effects of low-temperature postannealing on a n{sup +}-p shallow junction fabricated by plasma doping

Journal Article · Mon May 09 04:00:00 EDT 2005 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1923758· OSTI ID:20702344

Im, Kiju; Baek, Sungkweon; Hwang, Hyunsang; Ahn, Chang-Geun; Yang, Jong-Heon; Baek, In-Bok; Lee, Seongjae; Cho, Won-ju ^[1]

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1. Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, 1 Oryongdong, Buk-gu, Gwangju, 500-712 (Korea, Republic of)

A low-temperature activation annealing process following plasma doping (PLAD) was investigated. A dramatic reduction of sheet resistance R{sub s} occurred in the postactivation annealing temperature range of 400 deg. C-480 deg. C after PLAD. The R{sub s} of 30 {omega}/sq. and the junction depth X{sub j} of 30 nm was obtained without the additional diffusion of a dopant from the postactivation annealing in the fabricated junction. The electrical characteristics of a n{sup +}-p junction diode fabricated by PLAD were also improved after low-temperature postannealing.

• OSTI ID: 20702344
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 19 Vol. 86; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
70 PLASMA PHYSICS AND FUSION TECHNOLOGY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ANNEALING
DIFFUSION
ELECTRIC CONDUCTIVITY
JUNCTION DIODES
P-N JUNCTIONS
PLASMA
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0400-1000 K