Plasma damage-free sputtering of indium tin oxide cathode layers for top-emitting organic light-emitting diodes

Journal Article · Mon May 02 00:00:00 EDT 2005 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1923182· OSTI ID:20702323

Kim, Han-Ki; Kim, D -G; Lee, K -S; Huh, M -S; Jeong, S H; Kim, K I; Seong, Tae-Yeon ^[1]

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1. Core Technology Laboratory, Samsung SDI, Co., LTD., 575 Shin-dong, Youngtong-Gu, Suwon, Gyeonggi-Do, 442-391 (Korea, Republic of)

We report on plasma damage-free sputtering of an indium tin oxide (ITO) cathode layer, which was grown by a mirror shape target sputtering (MSTS) technique, for use in top-emitting organic light-emitting diodes (TOLEDs). It is shown that OLEDs with ITO cathodes deposited by MSTS show much lower leakage current (9.2x10{sup -5} mA/cm{sup 2}) at reverse bias of -6 V as compared to that (1x10{sup -1}-10{sup -2} mA/cm{sup 2} at -6 V) of OLEDs with ITO cathodes grown by conventional dc magnetron sputtering. Based on high-resolution electron microcopy, x-ray diffraction, and scanning electron microscopy results, we describe a possible mechanism by which plasma damage-free ITO films are grown and their application for TOLEDs.

• OSTI ID: 20702323
• Journal Information: Applied Physics Letters, Vol. 86, Issue 18; Other Information: DOI: 10.1063/1.1923182; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CATHODES
DEPOSITION
INDIUM COMPOUNDS
LAYERS
LEAKAGE CURRENT
LIGHT EMITTING DIODES
MAGNETRONS
PLASMA
RESOLUTION
SCANNING ELECTRON MICROSCOPY
SPUTTERING
TIN OXIDES
X-RAY DIFFRACTION