Positron beam studies of argon-irradiated polycrystal {alpha}-Zr
- Institute of High Energy Physics, Chinese Academy of Sciences, Box 918, Beijing 100039 (China)
Doppler broadening spectroscopy was performed using a variable-energy positron beam to investigate the effect of defects induced by 150-keV Ar-ion-irradiated {alpha}-Zr bulk material. S parameter in the damaged layer of the as-irradiated sample induced by ion irradiation increased with the increasing implantation dose. Isochronal annealing between 350 and 800 deg. C in vacuum studies was carried out to investigate the thermal stability of defects in the oxide surface and damaged layer for low-dose (1x10{sup 14} cm{sup 2}) and high-dose (1x10{sup 16} cm{sup 2}) irradiated samples. The results of S-W plot measured at different annealing temperatures showed that the positron-trapping center had changed. The Ar-decorated voids or vacancies, which formed in high-dose implantation samples by Ar ions combining with open-volume defects, are stable and do not recover until at high annealing temperatures. Comparing the annealing behavior of the high-dose and low-dose implantation samples show that the recovery process of open-volume defects such as vacancies and voids will be delayed by the excess Ar concentration.
- OSTI ID:
- 20668248
- Journal Information:
- Journal of Applied Physics, Vol. 97, Issue 6; Other Information: DOI: 10.1063/1.1833573; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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