Fabrication of high-density ordered nanoarrays in silicon dioxide by MeV ion track lithography

Journal Article · Tue Feb 15 00:00:00 EST 2005 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.1850617· OSTI ID:20668205

Razpet, Alenka; Johansson, Anders; Possnert, Goeran; Skupinski, Marek; Hjort, Klas; Hallen, Anders ^[1]

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1. Angstroem Laboratory, Box 534, Uppsala University, SE-751 21 Uppsala (Sweden)

Self-assembled nanoporous alumina films were employed as masks for MeV ion track lithography. Films with thickness of 2 {mu}m and pore diameters of 30 and 70 nm were attached to thermally grown SiO{sub 2} covered with a thin gold layer. The samples were aligned with respect to the beam by detecting backscattered He{sup +} ions with the initial energy of 2 MeV. The ordered pattern of the porous alumina films was successfully transferred into SiO{sub 2} after irradiation with a 4 MeV Cl{sup 2+} beam at fluence of 10{sup 14} ions/cm{sup 2}, followed by chemical etching in a 5% HF solution.

• OSTI ID: 20668205
• Journal Information: Journal of Applied Physics, Vol. 97, Issue 4; Other Information: DOI: 10.1063/1.1850617; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM OXIDES
BACKSCATTERING
CHLORINE IONS
ETCHING
FABRICATION
GOLD
HELIUM IONS
ION BEAMS
LAYERS
MEV RANGE 01-10
NANOSTRUCTURES
PARTICLE TRACKS
PERIODICITY
POROUS MATERIALS
SILICON OXIDES
SOLUTIONS
THICKNESS
THIN FILMS