Epitaxial properties of Al-doped ZnO thin films grown by pulsed laser deposition on SrTiO{sub 3}(001)

Journal Article · Tue Feb 15 00:00:00 EST 2005 · Physical Review. B, Condensed Matter and Materials Physics

DOI:https://doi.org/10.1103/PhysRevB.71.075304· OSTI ID:20665132

Karger, M; Schilling, M ^[1]

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1. Technische Universitaet Braunschweig, Institut fuer Elektrische Messtechnik und Grundlagen der Elektrotechnik, Hans-Sommer-Strasse 66, D-38106 Braunschweig (Germany)

Undoped and Al-doped ZnO films with dopant concentrations of nominally 1% and 10% and a thickness of 100 nm have been grown on SrTiO{sub 3}(001) by pulsed laser deposition at substrate temperatures between 650 deg. C and 820 deg. C. The epitaxial conditions were examined with high pressure in-situ reflection high energy electron diffraction (RHEED) and ex-situ x-ray diffraction (XRD) measurements in different geometries. The films are highly (1120)-oriented with a lattice mismatch between the SrTiO{sub 3}[110] direction and the c-axis of about 3%. Atomic force microscopy (AFM) revealed smooth surfaces with a roughness of d{sub rms}<5 nm and different sized islands.

• OSTI ID: 20665132
• Journal Information: Physical Review. B, Condensed Matter and Materials Physics, Vol. 71, Issue 7; Other Information: DOI: 10.1103/PhysRevB.71.075304; (c) 2005 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1098-0121
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM
ATOMIC FORCE MICROSCOPY
DOPED MATERIALS
ELECTRON DIFFRACTION
ENERGY BEAM DEPOSITION
EPITAXY
LASER RADIATION
LAYERS
PULSED IRRADIATION
SEMICONDUCTOR MATERIALS
STRONTIUM TITANATES
TEMPERATURE RANGE 0400-1000 K
THIN FILMS
X-RAY DIFFRACTION
ZINC OXIDES