Enhanced photoluminescence of Ga{sub 2}O{sub 3}:Dy{sup 3+} phosphor films by Li{sup +} doping

Journal Article · Tue Feb 01 00:00:00 EST 2005 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.1849829· OSTI ID:20665081

Pang, M L; Shen, W Y; Lin, J ^[1]

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1. Key Laboratory of Rare Earth Chemistry and Physics, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China)

Ga{sub 2}O{sub 3}:Dy{sup 3+} and Li{sup +}-doped Ga{sub 2}O{sub 3}:Dy{sup 3+} phosphor films were prepared by a Pechini sol-gel process. X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), atomic force microscopy, and photoluminescence (PL) spectra as well as lifetimes were used to characterize the resulting thin films (and powder samples for comparison). The results of the FTIR and XRD indicated that the films began to crystallize at 700 deg. C and the crystallinity increased with the elevation of annealing temperatures. Upon excitation into band gap of {beta}-Ga{sub 2}O{sub 3} at 250 nm, the Ga{sub 2}O{sub 3}:Dy{sup 3+} and Li{sup +}-doped Ga{sub 2}O{sub 3}:Dy{sup 3+} films show similar emission spectra, which mainly consist of the characteristic emission bands of Dy{sup 3+} ions ({sup 4}F{sub 9/2}-{sup 6}H{sub 13/2} transition at 492 nm and {sup 4}F{sub 9/2}-{sup 6}H{sub 15/2} transition at 580 nm) due to an efficient energy transfer from the {beta}-Ga{sub 2}O{sub 3} host lattice to the doped Dy{sup 3+} ions. The incorporation of Li{sup +} ions into the Ga{sub 2}O{sub 3}:Dy{sup 3+} film have enlarged the grain size and enhanced the photoluminescence intensities. The highest emission intensity was observed in Ga{sub 1.86}Dy{sub 0.04}O{sub 3}:0.1Li{sup +} film, whose PL intensity is more than twice that of the Ga{sub 1.96}Dy{sub 0.04}O{sub 3} film.

• OSTI ID: 20665081
• Journal Information: Journal of Applied Physics, Vol. 97, Issue 3; Other Information: DOI: 10.1063/1.1849829; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABSORPTION SPECTROSCOPY
ANNEALING
ATOMIC FORCE MICROSCOPY
DOPED MATERIALS
DYSPROSIUM IONS
EMISSION SPECTRA
ENERGY TRANSFER
EXCITATION
FOURIER TRANSFORM SPECTROMETERS
FOURIER TRANSFORMATION
GALLIUM OXIDES
GRAIN SIZE
INFRARED SPECTRA
LIFETIME
LITHIUM IONS
PHOTOLUMINESCENCE
SOL-GEL PROCESS
TEMPERATURE RANGE 0400-1000 K
THIN FILMS
X-RAY DIFFRACTION