Influence of growth temperature on interdiffusion in uncapped SiGe-islands on Si(001) determined by anomalous x-ray diffraction and reciprocal space mapping

Journal Article · Sat Jan 15 04:00:00 EST 2005 · Physical Review. B, Condensed Matter and Materials Physics

DOI:https://doi.org/10.1103/PhysRevB.71.035326· OSTI ID:20665055

Schuelli, T U ^[1]; Stoffel, M; Schmidt, O G ^[2]; Hesse, A; Stangl, J; Lechner, R T; Wintersberger, E; Bauer, G ^[3]; Sztucki, M; Metzger, T H ^[1]

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1. European Synchrotron Radiation Facility, Boite Postale 220, F-38043 Grenoble Cedex (France)
2. Max-Planck-Institute for Solid State Physics, D-70569 Stuttgart (Germany)
3. Institute for Semiconductor Physics, Johannes Kepler Universitaet Linz, A-4040 Linz (Austria)

The influence of growth temperature in the regime of dome formation in Stranski-Krastanow growth is studied systematically on a series of Ge on Si(001) samples. A combination of complementary x-ray scattering methods is applied, in order to resolve the island size, their strain state, and the composition distribution. The composition is determined using anomalous x-ray diffraction at high momentum transfer in combination with atomic force microscopy and from x-ray reciprocal space mapping. For growth temperatures between 620 and 840 deg. C, the maximum Ge content of the as-grown islands decreases from about 70 to about 22%. The results are corroborated by a selective etching study of the Ge islands.

• OSTI ID: 20665055
• Journal Information: Physical Review. B, Condensed Matter and Materials Physics, Journal Name: Physical Review. B, Condensed Matter and Materials Physics Journal Issue: 3 Vol. 71; ISSN 1098-0121
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ATOMIC FORCE MICROSCOPY
ETCHING
GERMANIUM ALLOYS
MOMENTUM TRANSFER
SILICON ALLOYS
STRAINS
X RADIATION
X-RAY DIFFRACTION