The Engineering and Properties of InAs Quantum Dot Molecules in a GaAs Matrix

Journal Article · Fri Dec 31 23:00:00 EST 2004 · Semiconductors

DOI:https://doi.org/10.1134/1.1852660· OSTI ID:20658149

Samsonenko, Yu B; Cirlin, G E; Tonkikh, A A; Polyakov, N K ^[1]; Kryzhanovskaya, N V; Ustinov, V M ^[2]; Vorob'ev, L E; Firsov, D A; Shalygin, V A ^[3]; Zakharov, N D; Werner, P ^[4]; Andreev, A ^[2]

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1. Institute for Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg, 198103 (Russian Federation)
2. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021 (Russian Federation)
3. St. Petersburg State Polytechnical University, St. Petersburg, 195251 (Russian Federation)
4. Max Planck Institute of Microstructure Physics, 06120 Halle (Germany)

Arrays of InAs quantum dot (QD) molecules in the GaAs matrix, which consist of pairs of vertically aligned InAs QDs, have been synthesized by molecular beam epitaxy. A study of the resulting structures by transmission electron microscopy demonstrated that the vertically aligned QDs are equal in size. Photoluminescence measurements revealed that the spectra of the samples under study contain bands corresponding to electronic states in QD molecules.

• OSTI ID: 20658149
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 1 Vol. 39; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM ARSENIDES
INDIUM ARSENIDES
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
QUANTUM DOTS
SEMICONDUCTOR MATERIALS
TRANSMISSION ELECTRON MICROSCOPY