The photosensitivity and ultraviolet absorption change of Sn-doped silica film fabricated by modified chemical vapor deposition

Journal Article · Wed Dec 01 00:00:00 EST 2004 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.1809249· OSTI ID:20658085

Guanghui, Chen; Yigang, Li; Liying, Liu; Yaoji, He; Lei, Xu; Wencheng, Wang ^[1]

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1. State Key Laboratory for Advanced Photonic Materials and Devices, Department of Optical Science and Engineering, Fudan University, Shanghai 200433 (China)

10.5 {mu}m thick Sn-doped silica films were prepared by the modified chemical vapor deposition followed by the solution-doping method. The films were exposed to 248 and 266 nm laser light, respectively. Positive refractive index change up to 2x10{sup -4} at 1550 nm was observed by measuring the reflectivity based on Fresnel formulas. The data of UV absorption spectra suggest that the photosensitivity of the Sn-doped silica film under high energy density laser irradiation should be mainly due to the bond breaking of oxygen deficient defects, while under relatively low energy density laser irradiation, the refractive index change probably originates from photoconversion of optically active defects.

• OSTI ID: 20658085
• Journal Information: Journal of Applied Physics, Vol. 96, Issue 11; Other Information: DOI: 10.1063/1.1809249; (c) 2004 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABSORPTION
ABSORPTION SPECTRA
CHEMICAL VAPOR DEPOSITION
CRYSTAL DEFECTS
DOPED MATERIALS
ENERGY DENSITY
IRRADIATION
LASERS
OXYGEN
PHOTOSENSITIVITY
REFLECTIVITY
REFRACTIVE INDEX
SILICA
SILICON COMPOUNDS
THIN FILMS
TIN
ULTRAVIOLET RADIATION
ULTRAVIOLET SPECTRA