Relaxor properties of lanthanum-doped bismuth layer-structured ferroelectrics
- College of Physics Science and Technology, Yangzhou University, Yangzhou 225002 (China)
Several polycrystalline samples of bismuth layer-structured ferroelectrics (BLSF) family doped by lanthanum, Bi{sub 4-x}La{sub x}Ti{sub 3}O{sub 12}, SrBi{sub 4-x}La{sub x}Ti{sub 4}O{sub 15}, Sr{sub 2}Bi{sub 4-x}La{sub x}Ti{sub 5}O{sub 18}, and (Bi,La){sub 4}Ti{sub 3}O{sub 12}-Sr(Bi,La){sub 4}Ti{sub 4}O{sub 15}, were prepared by the traditional solid-state reaction method. Their ferroelectric and dielectric properties were investigated. The dielectric measurement data showed that the content of lanthanum determined the ferroelectric characteristics of the compounds. In each series samples, they behaved as normal ferroelectrics for small x, but all of them tended to become relaxors when x was increased. The critical value of the La content causing relaxor characteristics is different for the different BLSFs due to the difference of the number of strontium atoms in their crystal structures. The appearance of the relaxor behavior was attributed to a ferroelectric microdomain state induced by random fields.
- OSTI ID:
- 20658038
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 10 Vol. 96; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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