Relativistic electronic dressing in laser-assisted ionization of atomic hydrogen by electron impact

Journal Article · Tue Jun 01 04:00:00 EDT 2004 · Physical Review. A

DOI:https://doi.org/10.1103/PhysRevA.69.063411· OSTI ID:20643789

Attaourti, Y ^[1]; Taj, S ^[2]

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1. Laboratoire de Physique des Hautes Energies et d'Astrophysique, Faculte des Sciences Semlalia, Universite Cadi Ayyad, BP: 2390, Marrakech (Morocco)
2. UFR de Physique Atomique, Moleculaire et Optique Appliquee, Faculte des Sciences, Universite Moulay Ismaiel, BP: 4010, Beni M'hamed, Meknes (Morocco)

Within the framework of the coplanar binary geometry where it is justified to use plane wave solutions for the study of the (e,2e) reaction and in the presence of a circularly polarized laser field, we introduce as a first step the Dirac-Volkov plane wave Born approximation 1 where we take into account only the relativistic dressing of the incident and scattered electrons. Then, we introduce the Dirac-Volkov plane wave Born approximation 2 where we take totally into account the relativistic dressing of the incident, scattered, and ejected electrons. We then compare the corresponding triple differential cross sections for laser-assisted ionization of atomic hydrogen by electron impact both for the nonrelativistic and the relativistic regime.

• OSTI ID: 20643789
• Journal Information: Physical Review. A, Journal Name: Physical Review. A Journal Issue: 6 Vol. 69; ISSN 1050-2947; ISSN PLRAAN
• Country of Publication: United States
• Language: English

Related Subjects

74 ATOMIC AND MOLECULAR PHYSICS
ATOMS
BORN APPROXIMATION
COMPARATIVE EVALUATIONS
DIFFERENTIAL CROSS SECTIONS
ELECTRON-ATOM COLLISIONS
ELECTRONS
GEOMETRY
HYDROGEN
IONIZATION
LASER RADIATION
MATHEMATICAL SOLUTIONS
RELATIVISTIC RANGE