Quantum magnetic field effects in atom-surface van der Waals interaction
- Department of Physics and Engineering Physics, Stevens Institute of Technology, Hoboken, New Jersey 07030 (United States)
This paper provides the theoretical basis for experimentation on van der Waals atom-surface energy as a manifestation of quantum zero-point energy, with a continuously variable parameterization by a Landau-quantizing magnetic field applied normal to the surface. Quantum magnetic field effects in the second-order van der Waals (vdW) atom-surface energy are fully analyzed. Focusing on the electrostatic nonretarded limit, we employ a random phase approximation (RPA) description of the dynamic, nonlocal polarizability of the mobile semi-infinite Landau quantized plasma behind a semiconductor surface. Our initial examination is carried out using a general low-wave-number approximation of the bounded plasma dielectric function both parallel and perpendicular to the surface, to expeditiously determine quantum magnetic field effects in the second-order vdW energy. Since the formulation calls for an integration over all wave numbers perpendicular to the surface, p{sub z}, we subsequently eliminate the reasonable approximation of the RPA polarizability expanded in powers of p{sub z}, and carry out a more accurate study in this respect. Explicit analytic results for quantum magnetic field effects in vdW energy due to a neutral atom in Coulombic interaction with a semi-infinite nonlocal, dynamic semiconductor plasma are obtained and presented in full detail.
- OSTI ID:
- 20640864
- Journal Information:
- Physical Review. A, Vol. 69, Issue 3; Other Information: DOI: 10.1103/PhysRevA.69.032901; (c) 2004 The American Physical Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1050-2947
- Country of Publication:
- United States
- Language:
- English
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