Anti-emission characteristics of the grid coated with hafnium film
- Research Center of Semiconductor Functional Film Engineering Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China)
Hf was deposited onto the surface of Mo grids by ion-beam-assisted deposition. The electron-emission characteristics of the grids with and without Hf, which were contaminated by active electron-emission substances (Ba, BaO) of the cathode, were measured using an analogous-diode method. The surfaces of the grids were analyzed by x-ray diffraction and x-ray photoelectron spectroscopy. The results showed that electron-emission current from the Mo grid coated with Hf film was less than that from the Mo grid without Hf. During the course of the testing, active electron-emission substances from the cathode were deposited continuously onto the surface of the grid. Due to BaHfO{sub 3} compounds and Ba-Hf diffusion, the Mo grid coated with Hf effectively reduced the electron-emission substances on the grid from the cathode, which reduced grid electron emission.
- OSTI ID:
- 20637095
- Journal Information:
- Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Vol. 23, Issue 3; Other Information: DOI: 10.1116/1.1894726; (c) 2005 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 0734-2101
- Country of Publication:
- United States
- Language:
- English
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