Surface treatment for the atomic layer deposition of HfO{sub 2} on silicon
- CEA/DRT, LETI/D2NT and DPTS, CEA/GRE 17 avenue des martyrs, 38000 GRENOBLE cedex 9 (France)
The atomic layer deposition (ALD) of HfO{sub 2} on silicon with a Cl{sub 2} surface treatment is investigated by physicochemical and electrical techniques. The specificity of this treatment is to create, on a HF-dipped silicon surface, the nucleation sites necessary for the ALD growth. The growth rates obtained by spectroscopic ellipsometry and total x-ray fluorescence spectroscopy indicate that the nucleation sites (i.e., the -OH groups), which are necessary to perform some bidimensional ALD growth, are generated during this surface treatment. After deposition of thin HfO{sub 2} layers (from a few monolayers up to 8.7 nm), a very thin parasitic SiO{sub x} layer, underneath 1 monolayer of Hf silicate, is observed by x-ray photoelectron spectroscopy. Nevertheless, an equivalent oxide thickness of 1.1 nm is obtained with an as-deposited 3.7 nm thick HfO{sub 2} layer.
- OSTI ID:
- 20637072
- Journal Information:
- Applied Physics Letters, Vol. 86, Issue 14; Other Information: DOI: 10.1063/1.1899237; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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