Physical model of InN growth on Ga-face GaN (0001) by molecular-beam epitaxy

Journal Article · Mon Mar 28 04:00:00 EST 2005 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1891292· OSTI ID:20637056

Dimakis, E; Iliopoulos, E; Tsagaraki, K; Georgakilas, A ^[1]

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1. University of Crete, Physics Department, Microelectronics Research Group, P.O. Box 2208, 71003 Heraklion-Crete (Greece)

A consistent physical model of the growth of InN on GaN (0001) by radio-frequency plasma-assisted molecular-beam epitaxy is presented. Four distinct regimes of InN growth are observed due to the temperature dependence of indium adatoms' mobility and of the InN decomposition rate. At substrate temperatures higher than 450 deg. C, indium adatoms are highly mobile and a self-regulating mechanism of InN islands' diameter takes place, so that a stoichiometric N:In atomic ratio on the top face of the islands is established. As a result, two-dimensional growth is possible only with In/N atomic ratio on the substrate surface equal to unity. The self-regulating mechanism could be exploited to engineer self-organized nanostructures.

• OSTI ID: 20637056
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 13 Vol. 86; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL GROWTH
DECOMPOSITION
DEPOSITION
GALLIUM NITRIDES
INDIUM
INDIUM NITRIDES
LAYERS
MAGNETIC ISLANDS
MOLECULAR BEAM EPITAXY
NANOSTRUCTURES
PLASMA
RADIOWAVE RADIATION
SEMICONDUCTOR MATERIALS
STOICHIOMETRY
SUBSTRATES
SURFACES
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0400-1000 K