Fabrication and photoluminescence properties of porous CdSe

Journal Article · Mon Feb 07 00:00:00 EST 2005 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1864240· OSTI ID:20637014

Tiginyanu, I M; Monaico, E; Ursaki, V V; Tezlevan, V E; Boyd, Robert W ^[1]

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1. National Center for Materials Study and Testing, Technical University of Moldova, Bd. Stefan cel Mare 168, Chisinau 2004 (Moldova, Republic of)

We report the results of a study of the growth of pores in n-CdSe single crystals using anodic etching techniques. Upon anodization in dark, a nonuniform distribution of pores was produced. However, anodic dissolution of the material under in situ UV illumination proves to result in uniform distribution of pores stretching perpendicularly to the initial surface of the specimen. The porous structures exhibit less luminescence than the bulk samples. These results pave the way for cost-effective manufacturing of CdSe-based semiconductor nanotemplates for nanofabrication.

• OSTI ID: 20637014
• Journal Information: Applied Physics Letters, Vol. 86, Issue 6; Other Information: DOI: 10.1063/1.1864240; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANODIZATION
CADMIUM SELENIDES
CRYSTAL GROWTH
ELECTROCHEMISTRY
ETCHING
FABRICATION
ILLUMINANCE
MANUFACTURING
MONOCRYSTALS
MORPHOLOGY
NANOSTRUCTURES
PHOTOLUMINESCENCE
POROUS MATERIALS
SEMICONDUCTOR MATERIALS
SURFACES
ULTRAVIOLET RADIATION