Ultrafast photoresponse at 1.55 {mu}m in InGaAs with embedded semimetallic ErAs nanoparticles
- Materials Department, University of California, Santa Barbara, California 93106-5050 (United States)
We have grown epitaxial metal/semiconductor superlattice materials by molecular beam epitaxy that exhibit subpicosecond photocarrier lifetimes at 1.55 {mu}m. The superlattice samples consist of layers of semimetallic ErAs nanoparticles embedded in a semiconducting In{sub 0.53}Ga{sub 0.47}As matrix. Time-resolved optical measurements are performed using a fiber-based transmission pump-probe technique with an erbium-doped-fiber mode-locked laser. Photocarrier lifetimes decrease with increasing ErAs deposition and decreasing spacing between the ErAs layers. Further reduction in the lifetime is achieved by selective beryllium doping of the superlattice; measured lifetimes {<=}0.3 ps were achieved in optimized structures.
- OSTI ID:
- 20636997
- Journal Information:
- Applied Physics Letters, Vol. 86, Issue 5; Other Information: DOI: 10.1063/1.1852092; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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