Extended defects in epitaxial Sc{sub 2}O{sub 3} films grown on (111) Si
- Materials Department, University of California, Santa Barbara, California 93106-5050 (United States)
Epitaxial Sc{sub 2}O{sub 3} films with the cubic bixbyite structure were grown on (111) Si by reactive molecular beam epitaxy. High-resolution transmission electron microscopy (HRTEM) revealed an abrupt, reaction-layer free interface between Sc{sub 2}O{sub 3} and Si. The {approx}10% lattice mismatch between Si and Sc{sub 2}O{sub 3} was relieved by the formation of a hexagonal misfit dislocation network with Burgers vectors of 1/2<110>{sub Si} and line directions parallel to <112>{sub Si}. A high density of planar defects and threading dislocations was observed. Analysis of lattice shifts across the planar defects in HRTEM showed that these faults were likely antiphase boundaries (APBs). ABPs form when film islands coalesce during growth because films nucleate with no unique arrangement of the ordered oxygen vacancies in the bixbyite structure relative to the Si lattice.
- OSTI ID:
- 20636993
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 5 Vol. 86; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Strain relaxation in Fe{sub 3}O{sub 4}/MgAl{sub 2}O{sub 4} heterostructures: Mechanism for formation of antiphase boundaries in an epitaxial system with identical symmetries of film and substrate
Dissociation of misfit and threading dislocations in Ba{sub 0.75}Sr{sub 0.25}TiO{sub 3} epitaxial film