Extended defects in epitaxial Sc{sub 2}O{sub 3} films grown on (111) Si

Journal Article · Mon Jan 31 04:00:00 EST 2005 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1857068· OSTI ID:20636993

Klenov, Dmitri O; Edge, Lisa F; Schlom, Darrell G; Stemmer, Susanne ^[1]

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1. Materials Department, University of California, Santa Barbara, California 93106-5050 (United States)

Epitaxial Sc{sub 2}O{sub 3} films with the cubic bixbyite structure were grown on (111) Si by reactive molecular beam epitaxy. High-resolution transmission electron microscopy (HRTEM) revealed an abrupt, reaction-layer free interface between Sc{sub 2}O{sub 3} and Si. The {approx}10% lattice mismatch between Si and Sc{sub 2}O{sub 3} was relieved by the formation of a hexagonal misfit dislocation network with Burgers vectors of 1/2<110>{sub Si} and line directions parallel to <112>{sub Si}. A high density of planar defects and threading dislocations was observed. Analysis of lattice shifts across the planar defects in HRTEM showed that these faults were likely antiphase boundaries (APBs). ABPs form when film islands coalesce during growth because films nucleate with no unique arrangement of the ordered oxygen vacancies in the bixbyite structure relative to the Si lattice.

• OSTI ID: 20636993
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 5 Vol. 86; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BURGERS VECTOR
CRYSTAL GROWTH
DIELECTRIC MATERIALS
DISLOCATIONS
INTERFACES
LAYERS
MAGNETIC ISLANDS
MOLECULAR BEAM EPITAXY
NUCLEATION
OXYGEN
RESOLUTION
SCANDIUM OXIDES
SEMICONDUCTOR MATERIALS
SILICON
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
VACANCIES