Investigation of the initial stage of growth of HfO{sub 2} films on Si(100) grown by atomic-layer deposition using in situ medium energy ion scattering
- Department of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju 500-712 (Korea, Republic of)
The initial stage of growth of HfO{sub 2} films on p-type Si(100) grown by atomic-layer deposition (ALD) was investigated using in situ medium energy ion scattering (MEIS). The interaction between adsorbed HfCl{sub 4} molecules and the oxidized Si surface was examined as a function of growth cycles. The results clearly show that island-like growth occurs during the initial HfO{sub 2} growth and the islands are then merged into a continuous atomic layer with an increase in ALD cycles. The morphology of thicker HfO{sub 2} films remained essentially unchanged with growth cycles. Interfacial reactions between Hf and Si during the initial growth stage were minimal. As a result, the effect of insufficient nucleation density is a dominant factor in the initial stage of growth of hafnium oxide on the oxidized Si substrate, resulting in nonlinear growth behavior.
- OSTI ID:
- 20636978
- Journal Information:
- Applied Physics Letters, Vol. 86, Issue 3; Other Information: DOI: 10.1063/1.1850596; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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