Polarity control of ZnO films grown on nitrided c-sapphire by molecular-beam epitaxy

Journal Article · Mon Jan 03 04:00:00 EST 2005 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1846951· OSTI ID:20636804

Xinqiang, Wang; Tomita, Yosuke; Roh, Ok-Hwan; Ohsugi, Masayuki; Che, Song-Bek; Ishitani, Yoshihiro; Yoshikawa, Akihiko ^[1]

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1. Center for Frontier Electronics and Photonics, Department of Electronics and Mechanical Engineering, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan)

The polarity of molecular-beam epitaxy grown ZnO films was controlled on nitrided c-sapphire substrate by modifying the interface between the ZnO buffer layer and the nitrided sapphire. The ZnO film grown on nitrided sapphire was proven to be Zn-polar while the O-polar one was obtained by using gallium predeposition on nitrided sapphire, which was confirmed by coaxial impact collision ion scattering spectroscopy and chemical etching effect. The Zn-polar ZnO film showed higher growth rate, slightly better quality, and different surface morphology in comparison to the O-polar one.

• OSTI ID: 20636804
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 1 Vol. 86; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL GROWTH
ETCHING
GALLIUM
LAYERS
MOLECULAR BEAM EPITAXY
MORPHOLOGY
SAPPHIRE
SEMICONDUCTOR MATERIALS
SPECTROSCOPY
SUBSTRATES
THIN FILMS
ZINC OXIDES