Nonadiabatic geometrical quantum gates in semiconductor quantum dots

Journal Article · Thu May 01 04:00:00 EDT 2003 · Physical Review. A

DOI:https://doi.org/10.1103/PhysRevA.67.052309· OSTI ID:20636358

Solinas, Paolo; Zanghi, Nino ^[1]; Zanardi, Paolo ^[2]; Rossi, Fausto ^[2]

---

1. Istituto Nazionale di Fisica Nucleare (INFN) and Dipartimento di Fisica, Universita di Genova, Via Dodecaneso 33, 16146 Genova (Italy)
2. Institute for Scientific Interchange (ISI), Viale Settimio Severo 65, 10133 Torino (Italy)

In this paper, we study the implementation of nonadiabatic geometrical quantum gates with in semiconductor quantum dots. Different quantum information enconding (manipulation) schemes exploiting excitonic degrees of freedom are discussed. By means of the Aharanov-Anandan geometrical phase, one can avoid the limitations of adiabatic schemes relying on adiabatic Berry phase; fast geometrical quantum gates can be, in principle, implemented.

• OSTI ID: 20636358
• Journal Information: Physical Review. A, Journal Name: Physical Review. A Journal Issue: 5 Vol. 67; ISSN 1050-2947; ISSN PLRAAN
• Country of Publication: United States
• Language: English

Related Subjects

74 ATOMIC AND MOLECULAR PHYSICS
DEGREES OF FREEDOM
GATING CIRCUITS
IMPLEMENTATION
INFORMATION THEORY
QUANTUM DOTS
QUANTUM MECHANICS
SEMICONDUCTOR MATERIALS