Structural and electrical properties of trimethylboron-doped silicon nanowires
- Department of Materials Science and Engineering, Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)
Trimethylboron (TMB) was investigated as a p-type dopant source for the vapor-liquid-solid growth of boron-doped silicon nanowires (SiNWs). The boron concentration in the nanowires was measured using secondary ion mass spectrometry and results were compared for boron-doping using TMB and diborane (B{sub 2}H{sub 6}) sources. Boron concentrations ranging from 1x10{sup 18} to 4x10{sup 19} cm{sup -3} were obtained by varying the inlet dopant/SiH{sub 4} gas ratio. TEM characterization revealed that the B{sub 2}H{sub 6}-doped SiNWs consisted of a crystalline core with a thick amorphous Si coating, while the TMB-doped SiNWs were predominantly single crystal even at high boron concentrations. The difference in structural properties was attributed to the higher thermal stability and reduced reactivity of TMB compared to B{sub 2}H{sub 6}. Four-point resistivity and gate-dependent conductance measurements were used to confirm p-type conductivity in the TMB-doped nanowires and to investigate the effect of dopant concentration on nanowire resistivity.
- OSTI ID:
- 20634347
- Journal Information:
- Applied Physics Letters, Vol. 85, Issue 15; Other Information: DOI: 10.1063/1.1792800; (c) 2004 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Effect of chlorine on dopant activation in a-Si:H
High density and taper-free boron doped Si{sub 1−x}Ge{sub x} nanowire via two-step growth process