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Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3}-Bi{sub 1.5}Zn{sub 1.0}Nb{sub 1.5}O{sub 7} composite thin films with promising microwave dielectric properties for microwave device applications

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.1785861· OSTI ID:20634335
; ; ; ; ;  [1]
  1. Center for Superconducting and Magnetic Materials, Department of Physics, National University of Singapore, Lower Kent Ridge Crescent, Singapore 119260 (Singapore)
Crack-free, dense, and uniform Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3}(BST)-Bi{sub 1.5}Zn{sub 1.0}Nb{sub 1.5}O{sub 7}(BZN) composite thin films were deposited on (100) LaAlO{sub 3} (100) SrTiO{sub 3}, and (100) MgO substrates via a pulsed laser deposition, using a combined target of BST and BZN ceramics. Phase composition and microstructure of the BST-BZN thin films were characterized by x-ray diffraction and scanning electron microscopy. The films, on LAO, STO, and MgO substrates, showed zero-field microwave ({approx}7.7 GHz) dielectric constants of 471, 435, and 401, dielectric loss tangents of 0.0048, 0.0043, and 0.0037, and dielectric tunabilities of 6.2%, 6.0%, and 5.7% at {approx}8.1 kV/cm, respectively. The good physical and electrical properties of the BST-BZN composite thin films make them promising candidates for microwave device applications.
OSTI ID:
20634335
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 16 Vol. 85; ISSN APPLAB; ISSN 0003-6951
Country of Publication:
United States
Language:
English