Microwave-induced dielectronic recombination above the classical ionization limit in a static field
- Department of Physics, University of Virginia, Charlottesville, Virginia 22904-4714 (United States)
The presence of a static electric field substantially enhances the dielectronic recombination (DR) rate below the classical field ionization limit and suppresses DR entirely above it. The addition of a small microwave field polarized orthogonally to the static field leads to a substantial DR signal above the classical ionization limit. We have examined DR from a continuum of finite bandwidth in static fields from 0 to 130 V/cm and with 8-11 GHz microwave fields of amplitudes up to 5 V/cm. We attribute the microwave-induced DR above the classical limit to the transfer of atoms by the microwave field from autoionizing the m=0 Rydberg intermediate states to higher m states. Since higher m states are more stable against field ionization, these states are more likely to decay radiatively to stable bound Stark states, thereby completing DR. This m-changing process most likely occurs by resonantly driving the {delta}n=0, {delta}m=1 transitions of the autoionizing Rydberg-Stark states with the microwave field.
- OSTI ID:
- 20634006
- Journal Information:
- Physical Review. A, Journal Name: Physical Review. A Journal Issue: 4 Vol. 67; ISSN 1050-2947; ISSN PLRAAN
- Country of Publication:
- United States
- Language:
- English
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