Deposition of Ti{sub 2}AlC and Ti{sub 3}AlC{sub 2} epitaxial films by magnetron sputtering

Journal Article · Mon Aug 09 00:00:00 EDT 2004 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1780597· OSTI ID:20632711

Wilhelmsson, O; Palmquist, J -P; Nyberg, T; Jansson, U ^[1]

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1. Department of Materials Chemistry, Angstroem Laboratory, Uppsala University, P.O. Box 538, S-751 21 Uppsala (Sweden)

Thin films of the M{sub n+1}AX{sub n}-phases Ti{sub 2}AlC and Ti{sub 3}AlC{sub 2} have been deposited by dc magnetron sputtering. In agreement with the Ti-Si-C system, the MAX-phase nucleation is strongly temperature dependent. At 900 deg. C epitaxial films of Ti{sub 2}AlC and Ti{sub 3}AlC{sub 2} were grown, but at 700 deg. C only a cubic (Ti,Al)C phase was formed. In addition, a perovskite carbide, Ti{sub 3}AlC was grown at 800 deg. C. A bulk resistivity of 0.51 {mu}{omega} m, 0.44 {mu}{omega} m, and 1.4 {mu}{omega} m was measured for the Ti{sub 3}AlC{sub 2}, Ti{sub 2}AlC, and Ti{sub 3}AlC films deposited at 900 deg. C, respectively. By nanoindentation the hardness and Young's module was determined for an epitaxial Ti{sub 3}AlC{sub 2} film to 20 GPa and 260 GPa, respectively.

• OSTI ID: 20632711
• Journal Information: Applied Physics Letters, Vol. 85, Issue 6; Other Information: DOI: 10.1063/1.1780597; (c) 2004 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM CARBIDES
CUBIC LATTICES
DEPOSITION
ELECTRIC CONDUCTIVITY
HARDNESS
LAYERS
MAGNETRONS
PEROVSKITE
PRESSURE RANGE GIGA PA
SPUTTERING
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0400-1000 K
TEMPERATURE RANGE 1000-4000 K
THIN FILMS
TITANIUM CARBIDES
VAPOR PHASE EPITAXY
YOUNG MODULUS