Fabrication and properties of nanoporous GaN films

Journal Article · Mon Aug 02 00:00:00 EDT 2004 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1774273· OSTI ID:20632704

Wang, Y D; Chua, S J; Sander, M S; Chen, P; Tripathy, S; Fonstad, C G ^[1]

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1. Singapore-MIT Alliance, E4-04-10, 4 Engineering Drive 3, Singapore 117576 (Singapore)

Nanopore arrays with pore diameters of approximately 75 nm were fabricated in GaN films by inductively coupled plasma etching using anodic aluminum oxide (AAO) films as etch masks. Nanoporous AAO films were formed on the GaN surface by evaporating an Al film onto a GaN epilayer and subsequently anodizing the aluminum. To minimize plasma-induced damage, the template was exposed to CF{sub 4}-based plasma conditions. Scanning electron microscopy analysis shows that the diameter and the periodicity of the nanopores in the GaN were directly transferred from the original anodic alumina template. The pore diameter in the AAO film can be easily controlled by tuning the anodization conditions. Atomic force microscopy, photoluminescence, and micro-Raman techniques were employed to assess the etched GaN nanopore surface. This cost-effective, nonlithographic method to produce nano-patterned GaN templates is expected to be useful for growth and fabrication of nitride-based nanostructures and photonic band gap materials.

• OSTI ID: 20632704
• Journal Information: Applied Physics Letters, Vol. 85, Issue 5; Other Information: DOI: 10.1063/1.1774273; (c) 2004 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM OXIDES
ANODIZATION
ATOMIC FORCE MICROSCOPY
CARBON TETRAFLUORIDE
CHEMICAL VAPOR DEPOSITION
ETCHING
FABRICATION
GALLIUM NITRIDES
NANOSTRUCTURES
PERIODICITY
PHOTOLUMINESCENCE
PLASMA
POROUS MATERIALS
RAMAN SPECTRA
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR MATERIALS
THIN FILMS