Thin HfO{sub 2} films grown on Si(100) by atomic oxygen assisted molecular beam epitaxy

Journal Article · Mon Jul 05 00:00:00 EDT 2004 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1767604· OSTI ID:20632656

Yan, Z J; Xu, R; Wang, Y Y; Chen, S; Fan, Y L; Jiang, Z M ^[1]

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1. Department of Physics, Lanzhou University, Lanzhou 730000 (China)

Thin high-k dielectric HfO{sub 2} films are deposited on Si(100) substrate by molecular beam epitaxy using Hf and atomic oxygen source. The composition of the film is determined to be stoichiometric HfO{sub 2}. The very flat surface of the deposited film with a root mean square roughness less than 0.16 nm without any visible pin holes down to the nanometer size can be reached. The film maintains good thermal stability after annealing at 900 deg. C for 15 min in N{sub 2} ambient. The refractive index of the film is 1.89 with a negligible extinction coefficient in the visible wavelength region and the dielectric constant is around 19. A low leakage current of 1.61x10{sup -3} A/cm{sup 2} at -2 V bias is achieved for a film with the equivalent oxide thickness of 2.4 nm after annealing.

• OSTI ID: 20632656
• Journal Information: Applied Physics Letters, Vol. 85, Issue 1; Other Information: DOI: 10.1063/1.1767604; (c) 2004 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
CAPACITORS
DIELECTRIC MATERIALS
HAFNIUM OXIDES
LEAKAGE CURRENT
MOLECULAR BEAM EPITAXY
MORPHOLOGY
OXYGEN
PERMITTIVITY
PHASE STABILITY
REFRACTIVE INDEX
ROUGHNESS
SILICON OXIDES
STOICHIOMETRY
SUBSTRATES
SURFACES
TEMPERATURE RANGE 1000-4000 K
THICKNESS
THIN FILMS
WAVELENGTHS