Physically Based Simulation of Electromigration-Induced Degradation of Inlaid Copper Interconnects
- LSI Logic Corporation, Advanced Development Lab, 1501 McCarthy Blvd., Milpitas, CA 95035 (United States)
A novel physical model and a simulation algorithm capable of predicting electromigration (EM) induced void nucleation and growth in an arbitrary interconnect segment have been developed. EM-induced void nucleation and growth in dual damascene (DD) copper interconnect structures have been predicted with a developed physical model and a simulation algorithm. The incorporation of all important contributions to directed atom migration into the mass balance equation and its solution together with the solution of the corresponding electromagnetics, heat transfer and elasticity problems, in a coupled manner, allows to simulate EM-induced degradation in dual-inlaid copper interconnect segments characterized by different dominant channels for EM-induced mass transport. Model provides a capability for the EM design rules generation/optimization with the physically based simulations. A simulation-based optimization of interconnect architecture, segment geometry, material properties and some of the process parameters can generate on-chip interconnect systems with a high immunity to EM-induced failures.
- OSTI ID:
- 20630487
- Journal Information:
- AIP Conference Proceedings, Vol. 741, Issue 1; Conference: 7. international workshop on stress-induced phenomena in metallization, Austin, TX (United States), 14-16 Jun 2004; Other Information: DOI: 10.1063/1.1845839; (c) 2004 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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