Direct epitaxial growth of submicron-patterned SiC structures on Si(001)

Journal Article · Sun Oct 31 23:00:00 EST 1999 · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena

DOI:https://doi.org/10.1116/1.591029· OSTI ID:20217892

Yi, Gyu-Chul ^[1]; Eres, G ^[1]; Lowndes, D H ^[1]

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1. Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)

We report on the direct epitaxial growth of submicron-patterned SiC structures on Si(001) substrates using supersonic molecular jet epitaxy and resistless e-beam lithography. Prior to SiC film growth, an electron beam was scanned on hydrogen-passivated Si substrates in order to produce silicon oxide lines with widths {>=}60 nm. The SiC nucleation and growth rates were significantly reduced on the oxidized regions during the subsequent supersonic jet epitaxial growth of SiC, which yielded epitaxial, submicron-patterned SiC films. The effects of the growth temperature and e-beam dose on the SiC growth and pattern linewidth are discussed. (c) 1999 American Vacuum Society.

• OSTI ID: 20217892
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena Journal Issue: 6 Vol. 17; ISSN 0734-211X; ISSN JVTBD9
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ELECTRON BEAMS
EPITAXY
EXPERIMENTAL DATA
HYDROGEN
JETS
NUCLEATION
PASSIVATION
RADIATION EFFECTS
SILICON
SILICON CARBIDES
SUBSTRATES
TEMPERATURE DEPENDENCE
THIN FILMS