Self-normalizing methods of photoelectron holography applied to As/Si(111)

Journal Article · Wed Dec 15 04:00:00 EST 1999 · Physical Review. B, Condensed Matter and Materials Physics

DOI:https://doi.org/10.1103/PhysRevB.60.16722· OSTI ID:20217828

Luh, D -A ^[1]; Miller, T ^[1]; Chiang, T -C ^[1]

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1. Department of Physics, University of Illinois at Urbana-Champaign, 1110 West Green Street, Urbana, Illinois 61801-3080 (United States)

Photoelectron holography requires a large data set covering a wide energy range. Changes in experimental conditions and sample surface regeneration during the course of measurement are often unavoidable or necessary, which can result in variations in measured intensity that must be normalized out before data processing. This normalization procedure can introduce a significant error, resulting in image degradation. To eliminate this problem, two methods of intensity self-normalization are introduced, one based on branching ratio measurements and the other based on logarithmic derivative measurements. The As-on-Si(111) system is chosen as a test case for these methods. Both the As and Si core levels are used to reconstruct the three-dimensional atomic structure for the top three atomic layers. The results from these two methods are mutually consistent and in good agreement with other available experimental and theoretical results. This paper also contains an analysis in regard to the use of an inner potential to account for surface refraction. Images are generated without refraction for an estimate of its effect on image quality. Similar analyses are carried out for the proper use of energy and angular window functions in the holographic transform, and for the effect of scattering phase shift that has been a major problem for direct data inversion. (c) 1999 The American Physical Society.

• OSTI ID: 20217828
• Journal Information: Physical Review. B, Condensed Matter and Materials Physics, Journal Name: Physical Review. B, Condensed Matter and Materials Physics Journal Issue: 24 Vol. 60; ISSN 1098-0121
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ARSENIC
BRANCHING RATIO
HOLOGRAPHY
INTERFACES
PHOTOELECTRON SPECTROSCOPY
SILICON
SURFACES