Optical transitions in the isoelectronically doped semiconductor GaP:N: An evolution from isolated centers, pairs, and clusters to an impurity band
- National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)
- Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093 (United States)
In heavily nitrogen doped GaP, we show how isoelectronic doping results in an impurity band, and how this is manifested as a large band-gap reduction and an enhanced band-edge absorption. Heavily doped GaP:N or GaP{sub 1-x}N{sub x} exhibits properties characteristic of both direct and indirect gap semiconductors. Exciton bound states associated with perturbed nitrogen pair centers and larger GaN clusters are observed. This paper indicates that to properly describe the properties of an impurity band, a hierarchy of impurity complexes needs to be considered. Our data also suggest that the excitonic effect plays a role in the impurity band formation and band-gap reduction. (c) 2000 The American Physical Society.
- OSTI ID:
- 20217359
- Journal Information:
- Physical Review. B, Condensed Matter and Materials Physics, Vol. 62, Issue 7; Other Information: PBD: 15 Aug 2000; ISSN 1098-0121
- Country of Publication:
- United States
- Language:
- English
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