Local structure of In{sub 0.5}Ga{sub 0.5}As from joint high-resolution and differential pair distribution function analysis
- Department of Physics and Astronomy and Center for Fundamental Materials Research, Michigan State University, East Lansing, Michigan 48823-1116 (United States)
- Laboratory for Research on the Structure of Matter and Department of Materials Science and Engineering, University of Pennsylvania, 9201 Walnut Street, Philadelphia, Pennsylvania 19104 (United States)
High resolution total and indium differential atomic pair distribution functions (PDFs) for In{sub 0.5}Ga{sub 0.5}As alloys have been obtained by high energy and anomalous x-ray diffraction experiments, respectively. The first peak in the total PDF is resolved as a doublet due to the presence of two distinct bond lengths, In-As and Ga-As. The In differential PDF, which involves only atomic pairs containing In, yields chemical specific information and helps ease the structure data interpretation. Both PDFs have been fit with structure models and the way in that the underlying cubic zinc-blende lattice of In{sub 0.5}Ga{sub 0.5}As semiconductor alloy distorts locally to accommodate the distinct In-As and Ga-As bond lengths present has been quantified. (c) 2000 American Institute of Physics.
- OSTI ID:
- 20217014
- Journal Information:
- Journal of Applied Physics, Vol. 88, Issue 2; Other Information: PBD: 15 Jul 2000; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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