In situ, real-time measurement of wing tilt during lateral epitaxial overgrowth of GaN

Journal Article · Mon Jun 26 04:00:00 EDT 2000 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.126812· OSTI ID:20216823

Fini, P ^[1]; Munkholm, A ^[2]; Thompson, Carol ^[3]; Stephenson, G B ^[3]; Eastman, J A ^[3]; Murty, M V. Ramana ^[3]; Auciello, O ^[3]; Zhao, L ^[1]; DenBaars, S P ^[1]; Speck, J S ^[1]

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1. Materials Department, University of California, Santa Barbara, Santa Barbara, California 93106 (United States)
2. Chemistry Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States)
3. Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States)

By performing in situ, real-time x-ray diffraction measurements in the metalorganic chemical-vapor deposition environment, we have directly observed the emergence and evolution of wing tilt that occurs during the lateral overgrowth of GaN from stripes patterned in a SiO{sub 2} mask. This was done by repeatedly performing line scans through the 101(bar sign)3 peak in the direction perpendicular to the [101(bar sign)0]{sub GaN} stripe direction. The wing tilt developed as soon as the wings started forming, and increased slightly thereafter to reach a value of {approx}1.19 degree sign after 3600 s of growth. Upon cooldown to room temperature, the tilt increased to {approx}1.36 degree sign , indicating that thermally induced stresses during cooldown have only a small effect on wing tilt. However, changes in mask density, composition, and stress state during early lateral overgrowth must be considered as possible origins of wing tilt. (c) 2000 American Institute of Physics.

• Research Organization: Argonne National Laboratory (ANL), Argonne, IL
• OSTI ID: 20216823
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 26 Vol. 76; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ADVANCED PHOTON SOURCE
CHEMICAL VAPOR DEPOSITION
EPITAXY
EXPERIMENTAL DATA
GALLIUM NITRIDES
MASKING
SILICON OXIDES
STRESSES
X-RAY DIFFRACTION