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Title: Local structure and bonding of Er in GaN: A contrast with Er in Si

Abstract

X-ray absorption measurements from relatively high concentrations of Er (>0.1 at. %) doped in GaN films show that Er occupies the Ga site with an unprecedentedly short Er-N bond length. Electroluminescence intensities from these GaN:Er films correlate with the concentration of Er atoms that replace Ga, not with the abundantly present O impurities in the host. Simple chemical concepts are used to explain each of these results and their striking difference from those obtained for Er-doped Si. (c) 2000 American Institute of Physics.

Authors:
 [1];  [1];  [2];  [2]
  1. Bell Labs, Lucent Technologies, Murray Hill, New Jersey 07974 (United States)
  2. University of Cincinnati, Nanoelectronics Laboratory, Cincinnati, Ohio 45221 (United States)
Publication Date:
OSTI Identifier:
20216360
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 76; Journal Issue: 20; Other Information: PBD: 15 May 2000; Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; GALLIUM NITRIDES; DOPED MATERIALS; ERBIUM ADDITIONS; X-RAY SPECTROSCOPY; BONDING; ELECTROLUMINESCENCE; STRUCTURAL CHEMICAL ANALYSIS; FINE STRUCTURE; NSLS; EXPERIMENTAL DATA

Citation Formats

Citrin, P. H., Northrup, P. A., Birkhahn, R., and Steckl, A. J. Local structure and bonding of Er in GaN: A contrast with Er in Si. United States: N. p., 2000. Web. doi:10.1063/1.126499.
Citrin, P. H., Northrup, P. A., Birkhahn, R., & Steckl, A. J. Local structure and bonding of Er in GaN: A contrast with Er in Si. United States. doi:10.1063/1.126499.
Citrin, P. H., Northrup, P. A., Birkhahn, R., and Steckl, A. J. Mon . "Local structure and bonding of Er in GaN: A contrast with Er in Si". United States. doi:10.1063/1.126499.
@article{osti_20216360,
title = {Local structure and bonding of Er in GaN: A contrast with Er in Si},
author = {Citrin, P. H. and Northrup, P. A. and Birkhahn, R. and Steckl, A. J.},
abstractNote = {X-ray absorption measurements from relatively high concentrations of Er (>0.1 at. %) doped in GaN films show that Er occupies the Ga site with an unprecedentedly short Er-N bond length. Electroluminescence intensities from these GaN:Er films correlate with the concentration of Er atoms that replace Ga, not with the abundantly present O impurities in the host. Simple chemical concepts are used to explain each of these results and their striking difference from those obtained for Er-doped Si. (c) 2000 American Institute of Physics.},
doi = {10.1063/1.126499},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 20,
volume = 76,
place = {United States},
year = {2000},
month = {5}
}