Local structure and bonding of Er in GaN: A contrast with Er in Si

Journal Article · Mon May 15 00:00:00 EDT 2000 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.126499· OSTI ID:20216360

Citrin, P H ^[1]; Northrup, P A ^[1]; Birkhahn, R ^[2]; Steckl, A J ^[2]

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1. Bell Labs, Lucent Technologies, Murray Hill, New Jersey 07974 (United States)
2. University of Cincinnati, Nanoelectronics Laboratory, Cincinnati, Ohio 45221 (United States)

X-ray absorption measurements from relatively high concentrations of Er (>0.1 at. %) doped in GaN films show that Er occupies the Ga site with an unprecedentedly short Er-N bond length. Electroluminescence intensities from these GaN:Er films correlate with the concentration of Er atoms that replace Ga, not with the abundantly present O impurities in the host. Simple chemical concepts are used to explain each of these results and their striking difference from those obtained for Er-doped Si. (c) 2000 American Institute of Physics.

• OSTI ID: 20216360
• Journal Information: Applied Physics Letters, Vol. 76, Issue 20; Other Information: PBD: 15 May 2000; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
GALLIUM NITRIDES
DOPED MATERIALS
ERBIUM ADDITIONS
X-RAY SPECTROSCOPY
BONDING
ELECTROLUMINESCENCE
STRUCTURAL CHEMICAL ANALYSIS
FINE STRUCTURE
NSLS
EXPERIMENTAL DATA