InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor

Journal Article · Mon Apr 17 00:00:00 EDT 2000 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.126315· OSTI ID:20215997

Chang, P C ^[1]; Baca, A G ^[1]; Li, N Y ^[2]; Xie, X M ^[2]; Hou, H Q ^[2]; Armour, E ^[3]

---

1. Sandia National Laboratories, Albuquerque, New Mexico 87123 (United States)
2. Emcore Photovoltaics, Emcore Corporation, Albuquerque, New Mexico 87123 (United States)
3. Emcore Corporation, Somerset, New Jersey 08873 (United States)

We have demonstrated a functional NpN double-heterojunction bipolar transistor (DHBT) using InGaAsN for the base layer. The InGaP/In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01}/GaAs DHBT has a low V{sub ON} of 0.81 V, which is 0.13 V lower than in a InGaP/GaAs heterojunction bipolar transistor (HBT). The lower turn-on voltage is attributed to the smaller band gap (1.20 eV) of metalorganic chemical vapor deposition-grown In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01} base layer. GaAs is used for the collector; thus the breakdown voltage (BV{sub CEO}) is 10 V, consistent with the BV{sub CEO} of InGaP/GaAs HBTs of comparable collector thickness and doping level. To alleviate the current blocking phenomenon caused by the larger conduction band discontinuity between InGaAsN and GaAs, a graded InGaAs layer with {delta} doping is inserted at the base-collector junction. The improved device has a peak current gain of seven with ideal current-voltage characteristics. (c) 2000 American Institute of Physics.

• OSTI ID: 20215997
• Journal Information: Applied Physics Letters, Vol. 76, Issue 16; Other Information: PBD: 17 Apr 2000; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
INDIUM PHOSPHIDES
GALLIUM PHOSPHIDES
GALLIUM ARSENIDES
GALLIUM NITRIDES
JUNCTION TRANSISTORS
CHEMICAL VAPOR DEPOSITION
ELECTRONIC STRUCTURE
EXPERIMENTAL DATA