Charged defects in highly emissive organic wide-band-gap semiconductors

Journal Article · Mon Apr 10 00:00:00 EDT 2000 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.126262· OSTI ID:20215796

List, E J. W. ^[1]; Kim, C H ^[2]; Shinar, J ^[2]; Pogantsch, A ^[1]; Leising, G ^[1]; Graupner, W ^[3]

---

1. Institut fuer Festkoerperphysik, Technische Universitaet Graz, A-8010 Graz, (Austria)
2. Ames Laboratory-USDOE and Department of Physics and Astronomy, Iowa State University, Ames, Iowa 50011 (United States)
3. Department of Physics, Virginia Tech, Blacksburg, Virginia 24060 (United States)

A combined photoluminescence (PL) -detected magnetic-resonance (PLDMR) and thermally stimulated current (TSC) study of defects in wide-band-gap para-phenylene-type semiconductors is described. As TSC probes the density of mobile charge carriers after detrapping and PLDMR reveals the influence of trapped charges on the PL, their combination yields the concentration of traps, their energetic position, and their contribution to PL quenching. The reported trap densities, which are 2x10{sup 16} for the polymer and 1x10{sup 14} cm{sup -3}, for the oligomer, are the lowest reported for para-phenylene-type materials. (c) 2000 American Institute of Physics.

• OSTI ID: 20215796
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 15 Vol. 76; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DEFECTS
EXPERIMENTAL DATA
MAGNETIC RESONANCE
ORGANIC SEMICONDUCTORS
PHOTOLUMINESCENCE
POLYMERS
RADIATION EFFECTS
TRAPPED ELECTRONS