Pressure-induced deep donor level in the chalcopyrite semiconductor alloy Ag{sub 0.25}Cu{sub 0.75}GaS{sub 2}

Journal Article · Tue Feb 15 00:00:00 EST 2000 · Physical Review. B, Condensed Matter and Materials Physics

DOI:https://doi.org/10.1103/PhysRevB.61.4689· OSTI ID:20215504

Choi, In-Hwan ^[1]; Eom, Sung-Hwan ^[1]; Yu, P Y ^[2]

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1. Physics Department, Chung-Ang University, Seoul, Korea (Korea, Republic of)
2. Department of Physics, University of California, Berkeley, California and Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)

We report the appearance of a deep donor in the photoluminescence spectra of the chalcopyrite semiconductor alloy Ag{sub 0.25}Cu{sub 0.75}GaS{sub 2} under hydrostatic pressures exceeding 5 GPa. The recombination peaks of this deep donor with acceptors exhibit either zero or a small negative pressure coefficient. Our results suggest the existence of a deep donor level which is resonant with the conduction band at ambient pressure. (c) 2000 The American Physical Society.

• OSTI ID: 20215504
• Journal Information: Physical Review. B, Condensed Matter and Materials Physics, Vol. 61, Issue 7; Other Information: PBD: 15 Feb 2000; ISSN 1098-0121
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
SILVER SULFIDES
COPPER SULFIDE SOLAR CELLS
GALLIUM SULFIDES
PHOTOLUMINESCENCE
CRYSTAL DEFECTS
PRESSURE DEPENDENCE
VERY HIGH PRESSURE
RECOMBINATION
EXPERIMENTAL DATA